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2SD1415/rf power transistor for vhf/power transistor mitsubishi/power transistor module/
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Related Categories:Transistors
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ISC Silicon NPN Darlington Power Transistor 2SD1415
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Product Description
DESCRIPTION Collector-Emitter Breakdown Voltage V(BR)CEO= 100V(Min) Collector-Emitter Saturation Voltage VCE(sat)= 1.5V(Max) @IC= 3A High DC Current Gain HFE= 2000(Min) @ IC= 3A, VCE= 3V Complement to Type 2SB1020 APPLICATIONS High power switching applications Hammer driver, pulse motor driver applications.
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